savantic semiconductor product specification silicon npn power transistors BD645/647/649/651 description with to-220c package complement to type bd646/648/650/652 darlington applications for use in output stages in audio equipment ,general amplifier,and analogue switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit BD645 80 bd647 100 bd649 120 v cbo collector-base voltage bd651 open emitter 140 v BD645 60 bd647 80 bd649 100 v ceo collector-emitter voltage bd651 open base 120 v v ebo emitter-base voltage open collector 5 v i c collector current-dc 8 a i cm collector current-pulse 12 a i b base current 0.3 ma p c collector power dissipation t c =25 62.5 w t j junction temperature 150 t stg storage temperature -65~150
savantic semiconductor product specification 2 silicon npn power transistors BD645/647/649/651 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit BD645 60 bd647 80 bd649 100 v (br)ceo collector-emitter breakdown voltage bd651 i c =30ma, i b =0 120 v v cesat-1 collector-emitter saturation voltage i c =3a ,i b =12ma 2.0 v v cesat-2 collector-emitter saturation voltage i c =5a ,i b =50ma 2.5 v v besat base-emitter saturation voltage i c =5a ,i b =50ma 3.0 v v be base-emitter on voltage i c =3a ; v ce =3v 2.5 v BD645 v cb =60v, i e =0 v cb =40v, i e =0 ;t c =150 0.2 2.0 bd647 v cb =80v, i e =0 v cb =50v, i e =0 ;t c =150 0.2 2.0 bd649 v cb =100v, i e =0 v cb =60v, i e =0 ;t c =150 0.2 2.0 i cbo collector cut-off current bd651 v cb =120v, i e =0 v cb =70v, i e =0 ;t c =150 0.2 2.0 ma BD645 v ce =30v, i b =0 bd647 v ce =40v, i b =0 bd649 v ce =50v, i b =0 i ceo collector cut-off current bd651 v ce =60v, i b =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 5 ma h fe dc current gain i c =3a ; v ce =3v 750 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 2.0 /w
savantic semiconductor product specification 3 silicon npn power transistors BD645/647/649/651 package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon npn power transistors BD645/647/649/651
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